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| VISHAY GSOT03 to GSOT36 Vishay Semiconductors ESD Protection Diode Features * Transient protection for data lines as per IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) see IPPM below 1 3 2 18078 Mechanical Data Case: SOT-23 Plastic Package Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Weight: 8 mg Absolute Maximum Ratings Ratings at 25 C, ambient temperature unless otherwise specified Parameter Peak power 1) Test condition 8/20 s pulse 8.3 ms single half sine-wave Symbol PPK IFSM Value 300 7 Unit W A dissipation1) Forward surge current Non-repetitive current pulse and derated above TA = 25 C, for GSOT03, GSOT04, the peak power dissipation is 270 W Thermal Characteristics Ratings at 25 C, ambient temperature unless otherwise specified Parameter Operation and storage temperature range Test condition Symbol Tstg, TJ Value - 55 to + 150 Unit C Electrical Characteristics Part Number Device Marking Code Rated Stand-off Voltage VWM V Minimum Breakdown Voltage VBR V @ 1 mA GSOT03 GSOT04 GSOT05 GSOT08 GSOT12 GSOT15 GSOT24 GSOT36 1) 1) Maximum Clamping Voltage VC V @ IP = 1 A 6.5 8.5 9.8 13.4 19.0 24.0 43.0 60.0 @ IP = 5 A 7.5 10.5 12.5 15.0 28.0 35.0 60.0 75.0 1) Maximum Pulse Peak Current tp = 8/20 s IPPM A 18 17 17 15 12 10 5 2 Maximum Leakage Current ID A @ VWM 125 125 100 10 2 1 1 1 Maximum Capacitance C pF @ 0 V, 1 MHz 800 800 550 400 185 140 83 80 03 04 05 08 12 15 24 36 3.3 4.0 5.0 8.0 12.0 15.0 24.0 36.0 4.0 5.0 6.0 8.5 13.3 16.7 26.7 40 8/20 s waveform used (see figure 2) Document Number 85807 Rev. 2, 02-Jun-03 www.vishay.com 1 GSOT03 to GSOT36 Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 10000 VISHAY PPPM - Peak Pulse Power (W) 1000 300W, 8/20 s waveshape 100 10 0.1 1.0 17476 td - Pulse Duration ( s ) 10 100 1000 10000 Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time 110 IPPM - Peak Pulse Current, % IRSM 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM td = IPP 2 20 25 30 17477 t - Time ( s ) Figure 2. Pulse Waveform 100 Peak Pulse Power 8/20 s 80 % Of Rated Power 60 40 20 Average Power 0 17478 0 25 50 75 100 125 150 TL - Lead Temperature C Figure 3. Power Derating www.vishay.com 2 Document Number 85807 Rev. 2, 02-Jun-03 VISHAY Package Dimensions in Inches (mm) GSOT03 to GSOT36 Vishay Semiconductors .12 2 ( 3.1) .110 (2.8) .016 ( 0.4) 3 Top View .056 ( 1.43 ) .052 ( 1.33 ) 1 2 ma x . .004 ( 0.1) .037( 0.95) .037( 0.95) .007 ( 0.17 5) .005 ( 0.125) .045 ( 1.15) .016 ( 0.4) .016 ( 0.4) .102 ( 2.6) .094 ( 2.4) 17418 Document Number 85807 Rev. 2, 02-Jun-03 .037 ( 0.95) www.vishay.com 3 GSOT03 to GSOT36 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85807 Rev. 2, 02-Jun-03 |
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